Formation of bottom oxides in porous silicon films by anodic oxidation

The formation of bottom oxide by electrochemical oxidation in porous silicon layers is studied. A technique of controlling the oxide layer thickness is developed. It is shown that the design of the anodization current level and of the porous silicon texture is an effective method for oxide formation...

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Bibliographic Details
Published in:Applied surface science 1996-02, Vol.92 (1-4), p.621-625
Main Authors: Lee, C.H., Yeh, C.C., Hsu, K.Y.J.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Electrodeposition, electroplating
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:The formation of bottom oxide by electrochemical oxidation in porous silicon layers is studied. A technique of controlling the oxide layer thickness is developed. It is shown that the design of the anodization current level and of the porous silicon texture is an effective method for oxide formation control.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(95)00305-3