Gas source molecular beam epitaxy of β-SiC on Si substrates

• Published in: Applied surface science 1996-08, Vol.102, p.22-27
• Main Authors: Zekentes, K., Bécourt, N., Androulidaki, M., Tsagaraki, K., Stoemenos, J., Bluet, J.M., Camassel, J., Pascual, J.
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(96)00012-8

The growth of β-SiC films on Si(100) substrates using C 2H 2 gas and Si solid sources in a molecular beam epitaxy system has been investigated. Different C 2H 2 and Si fluxes as well as different substrate temperatures have been used. The growth was performed at two steps: the initial optimal carbonisation step followed by the MBE growth with simultaneous supply of Si molecular and C 2H 2 gas beams. The films were analysed using reflected high-energy electron diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy and Fourier transform infrared spectroscopy. Thin (< 0.1 μm) single crystalline SiC was grown at 980°C while 850°C was sufficient for the carbonisation of the Si surface. Films thicker than 0.1 μm are partially polycrystalline.