Photocurrent spectroscopy measurements of SiGe alloys and superlattices

We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption processes of (001) SiGe strained layer superlattices and alloys with an average composition of 50%Si-50%Ge. We observed an evolution toward higher energies of the threshold in the photocurrent spectra a...

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Bibliographic Details
Published in:Applied surface science 1996-08, Vol.102, p.272-278
Main Authors: Colace, L., DiVergilio, A., Vaidyanathan, S., Pearsall, T.P., Presting, H., Kasper, Erich
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Elemental semiconductors and insulators
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:We used photocurrent spectroscopy at 300 K, 77 K and 4.2 K to investigate the optical absorption processes of (001) SiGe strained layer superlattices and alloys with an average composition of 50%Si-50%Ge. We observed an evolution toward higher energies of the threshold in the photocurrent spectra as the period of the superlattices decreases, with the spectrum of the shortest period superlattices (2:2) approaching that of the alloy. The energy dependence of absorption in these SiGe heterostructures is quite distinct from that measured in elemental silicon.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(96)00063-3