Chemical nature of the luminescent centre in fresh and aged porous silicon layers

In this study we have used high resolution parallel electron energy loss spectroscopy (PEELS) and X-ray excited optical luminescence (XEOL) to investigate the chemical nature of the luminescence centre in fresh and aged porous silicon. We find that regardless of the non-stoichiometric oxides which w...

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Bibliographic Details
Published in:Applied surface science 1996-08, Vol.102, p.408-412
Main Authors: Gardelis, S., Bangert, U., Hamilton, B., Pettifer, R.F., Hill, D.A., Keyse, R., Teehan, D.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other luminescence and radiative recombination
Physics
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Summary:In this study we have used high resolution parallel electron energy loss spectroscopy (PEELS) and X-ray excited optical luminescence (XEOL) to investigate the chemical nature of the luminescence centre in fresh and aged porous silicon. We find that regardless of the non-stoichiometric oxides which were observed by PEELS in our fresh porous silicon layers, SiSi bonded material is involved in the luminescence process. However, in the case of aged porous silicon both SiSi and SiO bonded material are involved.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(96)00088-8