A new chemical etch for defects studies in very thin film (< 1000 Å) SIMOX material

A new chemical solution has been developed to delineate crystallographic defects in thin silicon overlayers (< 1000 Å) of fully annealed SIMOX material. The new etchant is based on the HF:HNO 3:H 2O system and has proved to be superior to other etchants based upon dilute Secco solutions. Analysis...

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Bibliographic Details
Published in:Materials chemistry and physics 1993-09, Vol.35 (2), p.129-133
Main Authors: Giles, L.F., Nejim, A., Hemment, P.L.F.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:A new chemical solution has been developed to delineate crystallographic defects in thin silicon overlayers (< 1000 Å) of fully annealed SIMOX material. The new etchant is based on the HF:HNO 3:H 2O system and has proved to be superior to other etchants based upon dilute Secco solutions. Analysis by plan-view TEM has shown that SIMOX materials with a silicon overlayer as thin as 650 Å can be analyzed using this new etch.
ISSN:0254-0584
1879-3312
DOI:10.1016/0254-0584(93)90187-Q