Metal-organic molecular beam epitaxy (MOMBE) and laser-modified MOMBE of III-V semiconductors

We shall first describe some unique features of metal-organic molecular beam epitaxy (MOMBE), then focus on the use of safer alternative precursors to arsine, and finally report on the effect of argon ion laser irradiation on the MOMBE of GaAs and GaAs InGaAs quantum well structures.

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Bibliographic Details
Published in:Materials Chemistry and Physics 1995-05, Vol.40 (4), p.260-266
Main Authors: Tu, C.W., Dong, H.K., Li, N.Y.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Metal-organic molecular beam epitaxy
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Semiconductors
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Description
Summary:We shall first describe some unique features of metal-organic molecular beam epitaxy (MOMBE), then focus on the use of safer alternative precursors to arsine, and finally report on the effect of argon ion laser irradiation on the MOMBE of GaAs and GaAs InGaAs quantum well structures.
ISSN:0254-0584
1879-3312
DOI:10.1016/0254-0584(95)01489-6