A luminescence study of defects and internal strains in ion-implanted silicon on sapphire films

Low-temperature photoluminescence (4.2 and 35 K) has been used to study the defects created by high-energy particle irradiation (gamma rays, electrons, ions) of silicon on sapphire (SOS) films. It was found that the noble gas atoms implanted into silicon layers take an active part in the processes o...

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Bibliographic Details
Published in:Materials chemistry and physics 1996-08, Vol.45 (2), p.185-188
Main Authors: Mudryi, A.V., Patuk, A.I., Shakin, I.A., Korshunov, F.P., Zuev, V.A.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects
Defects and impurities in crystals
microstructure
Doping and impurity implantation in other materials
Exact sciences and technology
Luminescence
Physics
Silicon on sapphire films
Strain
Structure of solids and liquids
crystallography
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Summary:Low-temperature photoluminescence (4.2 and 35 K) has been used to study the defects created by high-energy particle irradiation (gamma rays, electrons, ions) of silicon on sapphire (SOS) films. It was found that the noble gas atoms implanted into silicon layers take an active part in the processes of interaction with radiation damage. Data on the temperature stability of luminescence centres are given. The residual compressive stress in SOS films is estimated using the photoluminescence method.
ISSN:0254-0584
1879-3312
DOI:10.1016/0254-0584(96)80101-5