Ion-beam-induced amorphization of 6H-SiC

We have investigated the amorphization of 6H-SiC during bombardment with Na ions of energy 100 and 155 keV, by means of Rutherford backscattering in channelling geometry, mechanical surface profiling and Raman spectroscopy. The material was found to amorphize at a critical damage rate of about 1/10...

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Bibliographic Details
Published in:Surface & coatings technology 1995-10, Vol.74 (1-3), p.927-931
Main Authors: Bolse, Wolfgang, Conrad, Jens, Rödle, Thomas, Weber, Thomas
Format: Article
Language:English
Subjects:
Amorphization
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Ion irradiation
Physics
Radiation damage
Silicon carbide
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We have investigated the amorphization of 6H-SiC during bombardment with Na ions of energy 100 and 155 keV, by means of Rutherford backscattering in channelling geometry, mechanical surface profiling and Raman spectroscopy. The material was found to amorphize at a critical damage rate of about 1/10 displacements per atom. An incubation fluence is needed to initiate the amorphization process. The observed density changes and the results of the Raman measurements also indicate that, at low fluences, an amorphous network is formed, which conserves the chemical short-range order of the crystalline material. Further application of higher fluences drives the system to form an atomically disordered structure without chemical short-range order.
ISSN:0257-8972
1879-3347
DOI:10.1016/0257-8972(95)08288-3