TEM investigation of titanium-silicide Schottky contacts on GaAs

Titanium silicides were used as Schottky contacts on GaAs. Samples with two different ratios of Ti:Si 1:2 and 1:3 were prepared. The composition with the 1:3 Ti:Si ratio was found to result in good Schottky contact parameters. Structural and analytical investigations, including high-resolution elect...

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Bibliographic Details
Published in:Ultramicroscopy 1985, Vol.18 (1), p.361-369
Main Authors: Liliental, Z., Kocot, C., Washburn, J., Gronsky, R.
Format: Article
Language:English
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Summary:Titanium silicides were used as Schottky contacts on GaAs. Samples with two different ratios of Ti:Si 1:2 and 1:3 were prepared. The composition with the 1:3 Ti:Si ratio was found to result in good Schottky contact parameters. Structural and analytical investigations, including high-resolution electron microscopy and energy-dispersive X-ray spectroscopy, were used to characterized the formed contacts.
ISSN:0304-3991
1879-2723
DOI:10.1016/0304-3991(85)90154-8