Cross-sectional and high resolution TEM studies of structural phase transitions in MeV-ion-implanted InP crystals

Cross-sectional and high resolution transmission electon microscopy (XTEM and HRTEM0 have been applied to investigate radiation damage and structural phase transitions in MeV-ion-implanted InP compound semiconductors. It has been found that the crystalline-amorphous transition in the implanted layer...

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Bibliographic Details
Published in:Ultramicroscopy 1989-06, Vol.30 (1), p.242-248
Main Authors: Xiong, Fulin, Nieh, C.W., Tombrello, T.A.
Format: Article
Language:English
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Summary:Cross-sectional and high resolution transmission electon microscopy (XTEM and HRTEM0 have been applied to investigate radiation damage and structural phase transitions in MeV-ion-implanted InP compound semiconductors. It has been found that the crystalline-amorphous transition in the implanted layer occurs at an implant dose over 1 × 10 15/cm 2, with the buried amorphous layer extending towards the sample surface as the implant dose increases. The recrystallization in the buried layer was stimulated through solid-phase epitaxy and homogeneous nucleation processes during thermal annealing at 500°C, resulting in a highly disordered structure. The results have led to a comprehensive understanding of mechecanisms of phase transitions in MeV-ion-implanted InP and complement the results of other characterization techniques.
ISSN:0304-3991
1879-2723
DOI:10.1016/0304-3991(89)90192-7