Structure and precipitation on a Σ = 13 tilt grain boundary in silicon

The structure of a Σ=13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete i...

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Bibliographic Details
Published in:Ultramicroscopy 1992-03, Vol.40 (3), p.258-264
Main Authors: Kim, M.J., Carpenter, R.W., Chen, Y.L., Schwuttke, G.H.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Grain and twin boundaries
Physics
Structure of solids and liquids
crystallography
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Summary:The structure of a Σ=13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete impurity precipitate particles were observed at the boundary. High-spatial-resolution electron-energy-loss-spectroscopy analysis showed them to be oxide particles of the form SiO x , with 0< x
ISSN:0304-3991
1879-2723
DOI:10.1016/0304-3991(92)90122-Z