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Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions
Stable silicon photodiodes with 100% internal quantum efficiency have been developed for the vacuum ultraviolet and soft x-ray regions. It is demonstrated that the response of these detectors can be reasonably well represented by a simple model for photon energies above 40 eV. The measured efficienc...
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Published in: | Journal of electron spectroscopy and related phenomena 1996-05, Vol.80, p.313-316 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Stable silicon photodiodes with 100% internal quantum efficiency have been developed for the vacuum ultraviolet and soft x-ray regions. It is demonstrated that the response of these detectors can be reasonably well represented by a simple model for photon energies above 40 eV. The measured efficiency is consistent with a constant electron-hole pair creation energy for Si above 40 eV. Radiation damage is demonstrated to result in loss of carriers to recombination at the front surface. The uniformity of the diodes is shown to be better than 0.1% RMS at 110 eV. |
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ISSN: | 0368-2048 1873-2526 |
DOI: | 10.1016/0368-2048(96)02983-0 |