Study of defect annealing by supercurrent proton beam irradiation and of radiation defect profiles in GaAs by the positron annihilation method

The annealing of radiation defects in GaAs by a supercurrent proton beam with currents up to 200 A cm −2 and 4.8 MeV energy was studied. The positron annihilation method (measurement of angular distribution of annihilation photons) has been used to study the depth profiles of radiation defects in so...

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Bibliographic Details
Published in:Physics letters. A 1983-01, Vol.97 (8), p.362-364
Main Authors: Pogrebnyak, A.D., Lopatin, V.S., Ziyakaev, R.G., Vorobiev, S.A.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:The annealing of radiation defects in GaAs by a supercurrent proton beam with currents up to 200 A cm −2 and 4.8 MeV energy was studied. The positron annihilation method (measurement of angular distribution of annihilation photons) has been used to study the depth profiles of radiation defects in solids. Profiles of vacancy-type defects in GaAs irradiated by a supercurrent proton beam have been measured.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(83)90664-3