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A mixed hard sphere interference function for molten Ge

The interference function of molten semiconductor Ge is calculated up to the Fermi diameter using the mixed hard sphere model developed recently by Canessa, Mariani and Vignolo. A good agreement with experiment is obtained.

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Bibliographic Details
Published in:Physics letters. A 1985-01, Vol.107 (2), p.87-88
Main Authors: Araos, J., Canessa, E., Vignolo, J.
Format: Article
Language:English
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Description
Summary:The interference function of molten semiconductor Ge is calculated up to the Fermi diameter using the mixed hard sphere model developed recently by Canessa, Mariani and Vignolo. A good agreement with experiment is obtained.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(85)90202-6