“Volume trapping” of protons in the channeling regime in a bent crystal

A computer analysis of the “volume trapping” effect for 1 GeV protons in the planar channeling regime in a bent Si crystal has been performed. The dependences of the trapping efficiency on the beam incidence angle and the bending radius of the crystal have been obtained.

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Bibliographic Details
Published in:Physics letters. A 1986-05, Vol.115 (8), p.398-400
Main Authors: Taratin, A.M., Vorobiev, S.A.
Format: Article
Language:English
Subjects:
Channeling phenomena (blocking, energy loss, etc.)
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Description
Summary:A computer analysis of the “volume trapping” effect for 1 GeV protons in the planar channeling regime in a bent Si crystal has been performed. The dependences of the trapping efficiency on the beam incidence angle and the bending radius of the crystal have been obtained.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(86)90285-9