Au-Si diffusion size effect

Using the dissociative model, diffusion of Au atoms into Si plate has been investigated for temperatures below 1270 K. It is shown that, as the plate thickness decreases, the interstitial regime can change into the vacancy regime of diffusion transfer.

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Bibliographic Details
Published in:Physics letters. A 1990-06, Vol.146 (7), p.421-425
Main Authors: Vaisleib, A.V., Goldiner, M.G.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Exact sciences and technology
Physics
Self-diffusion in metals, semimetals, and alloys
Transport properties of condensed matter (nonelectronic)
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Description
Summary:Using the dissociative model, diffusion of Au atoms into Si plate has been investigated for temperatures below 1270 K. It is shown that, as the plate thickness decreases, the interstitial regime can change into the vacancy regime of diffusion transfer.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(90)90722-Z