Damage profiles in silicon induced by 1.0 MeV Ti ions at tilted angle incidence

P-type silicon crystal has been irradiated at room temperature by 1.0 MeV Ti ions at tilted angle incidence in order to study the damage profiles. The irradiation was performed to a dose of 5×10 14ions/cm 2 under different tilted angles: 7°, 30°, 45° and 60°. The Rutherford backscattering (RBS)/chan...

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Bibliographic Details
Published in:Physics letters. A 1992-06, Vol.166 (5), p.361-364
Main Authors: Wang, Ke-Ming, Shi, Bo-Rong, Liu, Xiang-Dong, Xu, Tian-Bing, Zhu, Pei-Ran, Zhou, Jun-Si, Zhao, Qing-Tai
Format: Article
Language:English
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Summary:P-type silicon crystal has been irradiated at room temperature by 1.0 MeV Ti ions at tilted angle incidence in order to study the damage profiles. The irradiation was performed to a dose of 5×10 14ions/cm 2 under different tilted angles: 7°, 30°, 45° and 60°. The Rutherford backscattering (RBS)/channeling technique of 2.1 MeV He ions has been used in order to obtain information on the damage profiles. The damage profiles extracted are compared with the transport of ions in matter (TRIM'89). The result shows that the damage profiles seem to be in good agreement with the TRIM'89 prediction.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(92)90723-Y