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On the electron mobility in slightly compensated heavily doped GaAs at low temperatures

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Bibliographic Details
Published in:Physics letters. A 1993-11, Vol.182 (1), p.125-129
Main Authors: Quang, Doan Nhat, Dat, Nguyen Nhu, Van An, Dinh
Format: Article
Language:English
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ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(93)90065-8