Application of convergent beam electron diffraction to study the stacking of layers in transition-metal dichalcogenides

The stacking of layers in transition-metal dichalcogenides in the temperature range of about 40 K to 600 K has been studied by convergent beam electron microscopy. Results on the stacking order and crystal symmetry in the charge density wave (CDW) states of pure and doped 1T and 4Hb polytypes are pr...

Full description

Saved in:
Bibliographic Details
Published in:Physica B + C 1980, Vol.99 (1), p.47-50
Main Authors: Fung, K.K., Steeds, J.W., Eades, J.A.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The stacking of layers in transition-metal dichalcogenides in the temperature range of about 40 K to 600 K has been studied by convergent beam electron microscopy. Results on the stacking order and crystal symmetry in the charge density wave (CDW) states of pure and doped 1T and 4Hb polytypes are presented. We have succeeded in imaging the CDW domains in these materials. We also report the formation of CDWs in 6R-TaSe 2 and 4Hb-Nb 0.87V 0.13Se 2.
ISSN:0378-4363
DOI:10.1016/0378-4363(80)90208-9