Using reactor-neutron compensated germanium crystals to simulate the properties of amorphous semiconductors

The conduction of the reactor fast neutron-compensated n-Ge (Nsb ∾ 1015-1019 cm-3) has been studied. The formation of the disordered regions (DR) has been shown to generate an electrostatic potential with modulates the energy bands and affects strongly most of the electronic properties of a semicond...

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Bibliographic Details
Published in:Physica B + C 1983-02, Vol.116 (1-3), p.361-370
Main Authors: Konopleva, R.F., Evseev, V.A., Borisov, B.A., Nazarkin, I.V., Chekanov, V.A.
Format: Article
Language:English
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Summary:The conduction of the reactor fast neutron-compensated n-Ge (Nsb ∾ 1015-1019 cm-3) has been studied. The formation of the disordered regions (DR) has been shown to generate an electrostatic potential with modulates the energy bands and affects strongly most of the electronic properties of a semiconductor. The DR-compensated germanium is shown to possess most of the properties of the amorphous semiconductors. The fact that Ge-crystals with DRs exhibit typical properties of the amorphous state permits one to consider this material as a controlled model of the amorphous semiconductor.
ISSN:0378-4363
DOI:10.1016/0378-4363(83)90275-9