High voltage electron microscope study of defects in silicon

In-situ observation of defect formation in Fz and Cz silicon with (111) orientation by electron irradiation has been performed at temperatures between -100°C and 550°C using a 2 MeV high voltage electron microscope. Two kinds of interstitial type faulted dislocation loops are formed with and without...

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Bibliographic Details
Published in:Physica B + C 1983-02, Vol.116 (1-3), p.606-611
Main Authors: Oshima, R., Sadamitsu, S., Fujita, F.E.
Format: Article
Language:English
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Summary:In-situ observation of defect formation in Fz and Cz silicon with (111) orientation by electron irradiation has been performed at temperatures between -100°C and 550°C using a 2 MeV high voltage electron microscope. Two kinds of interstitial type faulted dislocation loops are formed with and without an incubation period, respectively. The former appears in the region localized at the electron entrance surface, and the latter mainly localized at the electron exit surface. Linear defects, which appear near the electron exit surface, are also observed. Annealing experiments of these secondary defects were carried out around 800°C, and the point defect species which contribute to the shrinkage of the loops were identified as the vacancy, and the mean activation energy of 3.5 eV was obtained for self diffusion.
ISSN:0378-4363
DOI:10.1016/0378-4363(83)90314-5