Optical determination of exciton sizes in semiconductors

We have studied the gradual disappearance of Ga3d core-exciton-related features in energy derivative reflectance spectra of GaAs crystals ion-implanted to increasing fluences. Our data yield radii rL = 23 Å and rx = 28 Å for the L and X excitons. In addition, a lineshape fit for unimplanted GaAs y...

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Bibliographic Details
Published in:Physica B + C 1983-03, Vol.117-118, p.362-364
Main Authors: Kelso, S.M., Aspnes, D.E., Olson, C.G., Lynch, D.W.
Format: Article
Language:English
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Summary:We have studied the gradual disappearance of Ga3d core-exciton-related features in energy derivative reflectance spectra of GaAs crystals ion-implanted to increasing fluences. Our data yield radii rL = 23 Å and rx = 28 Å for the L and X excitons. In addition, a lineshape fit for unimplanted GaAs yields core exciton binding energies EL = 0.172 eV and Ex = 0.129 eV. These radii and binding energies are not related through an effective mass approximation description of the core exciton.
ISSN:0378-4363
DOI:10.1016/0378-4363(83)90529-6