Observation of quantized hall effect and vanishing resistance at fractional Landau level occupation

Quantization of the Hall resistance ϱ xx and the approach of a zero-resistance state in ϱ xx are observed at fractional filling of Landau levels in the magneto-transport of the two-dimensional electrons in GaAs(AlGa) As heterostructures. At the lowest temperatures (T∼0.5K), the Hall resistance is q...

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Published in:Physica B + C 1983-01, Vol.117, p.688-690
Main Authors: Störmer, H.L., Tsui, D.C., Gossard, A.C., Hwang, J.C.M.
Format: Article
Language:English
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Summary:Quantization of the Hall resistance ϱ xx and the approach of a zero-resistance state in ϱ xx are observed at fractional filling of Landau levels in the magneto-transport of the two-dimensional electrons in GaAs(AlGa) As heterostructures. At the lowest temperatures (T∼0.5K), the Hall resistance is quantized to values ϱ xy = h/( 1 3 e 2 ) and ϱ xy = h/( 2 3 e 2 ). This observation, unexpected from current theoretical models for the quantized Hall effect, suggests the formation of a new electronic state at fractional level occupation.
ISSN:0378-4363
DOI:10.1016/0378-4363(83)90624-1