Internal photoemission in GaAs/(Al xGa 1−x)As heterostructures

Band offsets in (Al xGa 1−x)As/GaAs heterostructures are determined using internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and (Al xGa 1−x)As. Additional onsets occur at photon energies in the infrared regio...

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Bibliographic Details
Published in:Physica B + C 1985-01, Vol.134 (1), p.433-438
Main Authors: Abstreiter, G., Prechtel, U., Weimann, G., Schlapp, W.
Format: Article
Language:English
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Summary:Band offsets in (Al xGa 1−x)As/GaAs heterostructures are determined using internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and (Al xGa 1−x)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (Al xGa 1−x)As and in the near red region where excitations from the GaAs valence band into the (Al xGa 1−x)As conduction band are involved. From the measured energies we determine ΔE c/ ΔE g = 0.8 ± 0.03 for x = 0.2.
ISSN:0378-4363
DOI:10.1016/0378-4363(85)90384-5