Pressure dependence of the hole mobility in GaAs, InP and (GaIn)(AsP)/InP

• Published in: Physica B + C 1986, Vol.139, p.419-422
• Main Authors: Adams, A.R., Shantharama, L.G.
• Format: Article
• Language: English
• ISSN: 0378-4363
• DOI: 10.1016/0378-4363(86)90613-3

The mobility of holes in GaAs and InP was observed to increase with pressure at 0.31% kbar −1 and 0.18% kbar −1, respectively. By contrast the mobility in Ga 0.31In 0.69As 0.65P 0.35/InP was observed to decrease with pressure. The temperature dependence of the mobility in the alloy indicates the presence of alloy scattering and this is used to interpret the results. We calculate that the heavy hole effective mass varies as d ln m h ∗ dP = +8.0 × 10 −4 kbar −1 and d ln m h ∗ dP = +19 × 10 −4 kbar −1 for InP and the alloy respectively. By contrast the heavy hole effective mass decreases with pressure in GaAs, i.e. d ln m h ∗/ dP = −1.0 × 10 −4 kbar −1 . This agrees approximately with pseudopotential calculations.