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Nonlinear dielectric effect in the vicinity of the critical point of binary and doped critical solutions
A study has been made of the temperature behavior of the Nonlinear Dielectric Effect in the vicinity of the critical point of eight binary critical solutions. Various ways of determining the background effect are discussed. From numerical fitting of the data it was possible to describe the critical...
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Published in: | Physica A 1986-12, Vol.139 (2), p.569-584 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A study has been made of the temperature behavior of the Nonlinear Dielectric Effect in the vicinity of the critical point of eight binary critical solutions. Various ways of determining the background effect are discussed. From numerical fitting of the data it was possible to describe the critical part of the effect for all the solutions, making use of the same power relation with the exponent
ψ = 0.40±0.02. The NDE behavior in doped binary critical solutions was also studied. |
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ISSN: | 0378-4371 1873-2119 |
DOI: | 10.1016/0378-4371(86)90138-X |