Effects of implantation and annealing on the Raman spectrum of InP and GaAs

Raman scattering is sensitive to lattice order and effects such as implantation induced damage, encapsulation and annealing associated strains, and polycrystallite formation can result in significant changes in the spectrum. Semi-insulating (100) InP and GaAs substrates were implanted with Be or Si...

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Bibliographic Details
Published in:Applications of surface science 1981-01, Vol.9 (1), p.2-13
Main Authors: Abels, L.L., Sundaram, S., Schmidt, R.L., Comas, J.
Format: Article
Language:English
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Summary:Raman scattering is sensitive to lattice order and effects such as implantation induced damage, encapsulation and annealing associated strains, and polycrystallite formation can result in significant changes in the spectrum. Semi-insulating (100) InP and GaAs substrates were implanted with Be or Si and the laser-induced Raman spectra were measured as a function of implant fluence and annealing. Results and discussions on the variations of the LO mode intensity and the appearance of a well-defined signal at the TO frequency are presented in this paper.
ISSN:0378-5963
DOI:10.1016/0378-5963(81)90021-0