Quantitative hydrogen depth-profiling using SIMS

SIMS depth-profiles of hydrogen in two silicon samples were obtained using a newly developed SIPS-SIMS scanning ion probe. Problems involving quantification of hydrogen using SIMS are discussed by comparing the depth profiles with 1H( 19F, αγ) 16O nuclear reaction data.

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Bibliographic Details
Published in:Applications of surface science 1981, Vol.7 (1), p.2-6
Main Authors: Lundquist, T.R., Burgner, R.P., Swann, P.R., Tsong, I.S.T.
Format: Article
Language:English
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Summary:SIMS depth-profiles of hydrogen in two silicon samples were obtained using a newly developed SIPS-SIMS scanning ion probe. Problems involving quantification of hydrogen using SIMS are discussed by comparing the depth profiles with 1H( 19F, αγ) 16O nuclear reaction data.
ISSN:0378-5963
0169-4332
DOI:10.1016/0378-5963(81)90055-6