Charge transport and storage in ion implanted metal-oxide-semiconductor structures

A physical model that predicts charge accumulation in MOS structures with implanted SiO 2 is investigated theoretically and experimentally. It is shown that, to achieve memory effects, MOS structures have to include a SiO 2 layer with different conduction mechanism along its thickness. The sign of t...

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Bibliographic Details
Published in:Applications of surface science 1982, Vol.10 (3), p.349-356
Main Authors: Augulis, L., Pranevičius, L., Vosylius, J.
Format: Article
Language:English
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Summary:A physical model that predicts charge accumulation in MOS structures with implanted SiO 2 is investigated theoretically and experimentally. It is shown that, to achieve memory effects, MOS structures have to include a SiO 2 layer with different conduction mechanism along its thickness. The sign of the flat-band voltage shift depends on the localization of traps in oxide created by ion implantation. The time characteristics of charge accumulation and discharging of implanted SiO 2 by the pulses of applied voltage are similar to those observed in MNOS structures.
ISSN:0378-5963
DOI:10.1016/0378-5963(82)90166-0