Some investigations on the influence of defects/grain boundaries on photovoltaic mechanisms in polycrystalline silicon films

Several non-destructive techniques for characterizing polycrystalline silicon films for photovoltaic applications are described. These include the surface photovoltage, current phase shift, multiple wavelength focused laser scanner and electron-beam-induced current methods. The results of some inves...

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Bibliographic Details
Published in:Solar cells 1980, Vol.1 (3), p.237-250
Main Authors: Sopori, B.L., Baghdadi, A.
Format: Article
Language:English
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Summary:Several non-destructive techniques for characterizing polycrystalline silicon films for photovoltaic applications are described. These include the surface photovoltage, current phase shift, multiple wavelength focused laser scanner and electron-beam-induced current methods. The results of some investigations of the influence of defects and grain boundaries on photovoltaic mechanisms are discussed. It is shown that polycrystalline silicon films can be characterized by an “average” minority carrier diffusion length.
ISSN:0379-6787
1878-2655
DOI:10.1016/0379-6787(80)90070-8