A new approach for thin film InP solar cells

The use of an InP thin film solar cell on an Si substrate is proposed; its qualities of high efficiency and high radiation resistance are important in minimizing cost and weight. The advantages of InP over GaAs and Si as a thin film solar cell material are discussed. The photovoltaic properties of t...

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Bibliographic Details
Published in:Solar cells 1986-11, Vol.19 (1), p.85-96
Main Authors: Yamaguchi, Masafumi, Yamamoto, Akio, Uchida, Naoto, Uemura, Chikao
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Solar thermal conversion
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Summary:The use of an InP thin film solar cell on an Si substrate is proposed; its qualities of high efficiency and high radiation resistance are important in minimizing cost and weight. The advantages of InP over GaAs and Si as a thin film solar cell material are discussed. The photovoltaic properties of the InP thin film solar cell are calculated by considering the dislocation effect upon the minority-carrier diffusion length in the thin film. It is estimated that one can fabricate InP thin film solar cells on Si substrates, with an efficiency of 18% or more, if the dislocation density in the InP film is less than 10 6 cm −2.
ISSN:0379-6787
1878-2655
DOI:10.1016/0379-6787(86)90052-9