Effects of dopant and impurity incorporation on metastable light-induced defect formation

In this paper we summarize recent measurements of the effects of impurities and dopants on metastability in hydrogenated amorphous silicon. Using a new method of electron spin resonance transient spectroscopy, the distribution of defect annealing energies of samples containing significant concentrat...

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Bibliographic Details
Published in:Solar cells 1987-06, Vol.21 (1), p.431-438
Main Authors: Jackson, W.B., Stutzmann, M., Tsai, C.C.
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Solar energy
Solar thermal conversion
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Summary:In this paper we summarize recent measurements of the effects of impurities and dopants on metastability in hydrogenated amorphous silicon. Using a new method of electron spin resonance transient spectroscopy, the distribution of defect annealing energies of samples containing significant concentrations of oxygen, nitrogen and carbon are compared with ultrahigh vacuum intrinsic material. Although the impurities cause significant alterations in the annealing energy distribution, deuteration does not change the creation rate or the annealing distribution. The addition of phosphorus dopant atoms causes significant changes in the number of the metastable defects, and hyperfine measurements indicate that light induces metastable changes in the phosphorus donor concentration. Possible models for this effect are discussed.
ISSN:0379-6787
1878-2655
DOI:10.1016/0379-6787(87)90141-4