Direct-indirect band gap crossover in two-dimensional GaSb/AlSb-quantum-well-structures

Using excitation and time-resolved spectroscopy we have investigated the size-dependent change from direct to indirect band structure in two-dimensional GaSb/AlSb structures. In the indirect regime (L z ⩽38 Å) we observe L- and Λ-point transitions, whereas in the direct-gap samples only the Λ-point...

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Bibliographic Details
Published in:Superlattices and microstructures 1987, Vol.3 (4), p.429-434
Main Authors: Cebulla, U., Forchel, A., Tränkle, G., Griffiths, G., Subbanna, S., Kroemer, H.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Using excitation and time-resolved spectroscopy we have investigated the size-dependent change from direct to indirect band structure in two-dimensional GaSb/AlSb structures. In the indirect regime (L z ⩽38 Å) we observe L- and Λ-point transitions, whereas in the direct-gap samples only the Λ-point emission occurs. Direct evidence for the crossover is provided by the increase of the carrier life-time from less than 1 ns in direct-gap samples to more than 100 ns in indirect-gap samples.
ISSN:0749-6036
1096-3677
DOI:10.1016/0749-6036(87)90218-7