A study of band-gap renormalization in N- and P- type modulation doped GaAs-quantum wells

A systematic investigation of the band-gap renormalization observed in thin n- and p- modulation doped GaAs-quantum wells (QWs) is reported. Photoluminescence and photoluminescence excitation spectroscopy on undoped and modulation doped QWs of the same width provide reliable data for the band-gap sh...

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Bibliographic Details
Published in:Superlattices and microstructures 1991, Vol.9 (1), p.27-30
Main Authors: Haacke, S., Zimmermann, R., Bimberg, D., Mars, D.E., Miller, J.N.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:A systematic investigation of the band-gap renormalization observed in thin n- and p- modulation doped GaAs-quantum wells (QWs) is reported. Photoluminescence and photoluminescence excitation spectroscopy on undoped and modulation doped QWs of the same width provide reliable data for the band-gap shifts and the actual carrier concentrations. A careful lineshape analysis is crucial for the separation of intrinsic and extrinsic luminescence components. The experimental data compare favorably with our calculations of band-gap renormalization within the Local-Density approximation as well as with the self-energy shifts of electron and hole subbands found by a random phase approach. In particular, we observe that carrier confinement enhances BGR.
ISSN:0749-6036
1096-3677
DOI:10.1016/0749-6036(91)90086-7