Measurement of the decay of light-induced gratings for characterization of QW heterostructures of type I and II

Using a non-resonant transient grating technique the mobility and recombination lifetime of free carriers in type I and type II QW heterostructures is measured. For the lattice-matched type II Ca xSr 1−xF 2/GaAs structures the diffusion coefficient as well as the diffraction efficiency is found to b...

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Bibliographic Details
Published in:Superlattices and microstructures 1991, Vol.9 (4), p.411-414
Main Authors: Weinert, H., Jarasiunas, K., Kollenda, J., Petrauskas, M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:Using a non-resonant transient grating technique the mobility and recombination lifetime of free carriers in type I and type II QW heterostructures is measured. For the lattice-matched type II Ca xSr 1−xF 2/GaAs structures the diffusion coefficient as well as the diffraction efficiency is found to be affected by carrier separation into different layers. For GaAs/GaAlAs superlattices a strong influence of the barrier parameters on the inplane diffusion of heavy holes is observed.
ISSN:0749-6036
1096-3677
DOI:10.1016/0749-6036(91)90161-J