The Si-H IR absorption bands in NTD FZ (H2) Si and their identification

The 1832, 2054, 1980, 2066, 1970, 1984, 2016 and 2050–2150 cm-1 Si-H infrared absorption bands in neutron transmutation doped FZ-silicon grown in a hydrogen atmosphere have been identified.

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1991-04, Vol.170 (1-4), p.249-252
Main Author: Meng, X.T.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Infrared and raman spectra and scattering
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
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Description
Summary:The 1832, 2054, 1980, 2066, 1970, 1984, 2016 and 2050–2150 cm-1 Si-H infrared absorption bands in neutron transmutation doped FZ-silicon grown in a hydrogen atmosphere have been identified.
ISSN:0921-4526
1873-2135
DOI:10.1016/0921-4526(91)90132-X