A new approach to wide band gap visible-light emitters

We report on a new approach to the fabrication of visible-light emitters from wide bandgap semiconductors. Our structures avoid the ohmic contacting problems which have been encountered in p-ZnSe:N devices by using only the doping types which tend to occur naturally in II–VI semiconductors. Specific...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1993-04, Vol.185 (1), p.485-489
Main Authors: Phillips, M.C., Swenberg, J.F., Wang, M.W., McCaldin, J.O., McGill, T.C.
Format: Article
Language:English
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Summary:We report on a new approach to the fabrication of visible-light emitters from wide bandgap semiconductors. Our structures avoid the ohmic contacting problems which have been encountered in p-ZnSe:N devices by using only the doping types which tend to occur naturally in II–VI semiconductors. Specifically, we choose the closely lattice-matched n-CdSe/p-ZnTe heterojunction. To overcome the type-II blocking band alignment of this heterojunction, we introduce a graded alloy region which allows injection of electrons into the ZnTe while retaining the blocking offset in the valence band to inhibit injection of holes into the CdSe. Room temperature electrical characteristics and electroluminescence spectra confirm the effectiveness of this approach. Finally, we show how the emission wavelength can be shifted to blue wavelengths and beyond by expanding the bandgap of the recombination region with a Mg y Zn 1− y Te alloy.
ISSN:0921-4526
DOI:10.1016/0921-4526(93)90283-C