Spin dependent transport in a two-dimensional electron gas

Neutral impurity scattering in semiconductors has been directly observed for the first time via measurements of spin dependent transport (SDT) in a two-dimensional electron gas. SDT was observed by monitoring the conductivity of a specially designed Si field-effect transistor operating at 4K, while...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1994-02, Vol.194, p.1331-1332
Main Authors: Ghosh, Ruby N., Silsbee, Robert H.
Format: Article
Language:English
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Summary:Neutral impurity scattering in semiconductors has been directly observed for the first time via measurements of spin dependent transport (SDT) in a two-dimensional electron gas. SDT was observed by monitoring the conductivity of a specially designed Si field-effect transistor operating at 4K, while modulating the electron spin populations. A signal from 10 8 spins was easily detected. We discuss exploiting the enhanced sensitivity of SDT over conventional electron spin resonance methods to probe two or lower dimensional spin systems.
ISSN:0921-4526
DOI:10.1016/0921-4526(94)90995-4