Characterization of Si/Ge interfaces by diffuse X-ray scattering in the region of total external reflection

Four samples with different numbers of Si/Ge-bilayers were grown at the same time by high vacuum vapor deposition onto Si(111)-substrates at room temperature. Diffuse scattering experiments within the region of total external reflection were carried out to investigate the mesoscopic roughness of the...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1996-04, Vol.221 (1), p.44-52
Main Authors: Schlomka, J.-P., Fitzsimmons, M.R., Pynn, R., Stettner, J., Seeck, O.H., Tolan, M., Press, W.
Format: Article
Language:English
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Summary:Four samples with different numbers of Si/Ge-bilayers were grown at the same time by high vacuum vapor deposition onto Si(111)-substrates at room temperature. Diffuse scattering experiments within the region of total external reflection were carried out to investigate the mesoscopic roughness of the interfaces. The data are explained quantitatively using the distorted wave Born approximation (DWBA) for correlated layer systems with self-affine interfaces. Because all samples were grown under identical conditions the interface parameters of the simpler systems were used for the more complex samples in order to reduce the number of free parameters in the refinement. The resulting trends for the roughness amplitude and the in-plane correlation lengths are compared to predictions from different growth models.
ISSN:0921-4526
1873-2135
DOI:10.1016/0921-4526(95)00903-5