Photon assisted transport through semiconductor quantum structures in intense terahertz electric fields

• Published in: Physica. B, Condensed matter Condensed matter, 1996-09, Vol.227 (1), p.367-372
• Main Authors: Allen, S.J., Bhattacharya, U., Campman, K., Drexler, H., Gossard, A., Keay, B.J., Maranowski, K., Medeiros-Ribeiro, G., Rodwell, M., Scott, J.S., Unterrainer, C., Wanke, M., Zeuner, S.
• Format: Article
• Language: English
• Subjects: Intense fields; Photon-assisted transport; Semiconductors
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/0921-4526(96)00446-2

Quantum transport in resonant tunneling diodes, sequential resonant tunneling superlattices and miniband superlattices in the presence of intense terahertz electric fields is marked by new channels opened by the absorption or emission of one or more terahertz photons. In triple barrier resonant tunneling diodes, new transport channels supported by the absorption or stimulated emission of up to three terahertz photons are observed. In sequential resonant tunneling superlattices, dynamic localization is accompanied by absolute negative resistance. Transport in miniband resonances with controlled by coherent tunneling through several barriers and quantum wells, reveals multi-photon resonances with Bloch oscillation. Photon-assisted transport in these semiconductor quantum structures bears a strong analogy to quasi-particle tunneling and the AC Josephson effect in superconducting junctions and opens the arena of superconducting electronics to semiconductor systems. These experiments are made possible by the UCSB free-electron lasers that deliver kilowatts of tunable radiation from 120 GHz to 4.8 THz.