Hopping conductivity in the PrBa2Cu3− xGaxO7− y system

The temperature dependece of resistivity is reported for the PrBa 2 Cu 3− x Ga x O 7− y system with x=0, 0.01, 0.03, 0.05, 0.07, 0.09, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6. We find that the substitution of Cu by Ga increases the resistivity of PrBa 2 Cu 2.4 Ga 0.6 O 7− y to reach 10 10Ωcm at 100 K. This...

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Bibliographic Details
Published in:Physica. C, Superconductivity Superconductivity, 1993-02, Vol.206 (1), p.59-69
Main Authors: Xu, Yunhui, Guan, Weiyan
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Electronic transport in condensed matter
Exact sciences and technology
Physics
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Summary:The temperature dependece of resistivity is reported for the PrBa 2 Cu 3− x Ga x O 7− y system with x=0, 0.01, 0.03, 0.05, 0.07, 0.09, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6. We find that the substitution of Cu by Ga increases the resistivity of PrBa 2 Cu 2.4 Ga 0.6 O 7− y to reach 10 10Ωcm at 100 K. This is a 123-structural insulator and thus an ideal barrier material for fabrication of S-I-S junctions. The results are interpreted in terms of hopping conductivity (both nearest-neighbor hopping and variable-range hopping) for doped semiconductors.
ISSN:0921-4534
1873-2143
DOI:10.1016/0921-4534(93)90701-Q