Megaelectronvolt implants into GaAs using a hot-cathode penning ion source

Carrier concentration and mobility profiles as a function of annealing time and temperature are reported for megaelectronvolt silicon implants into GaAs. Atomic profiles show the implant profile shape to be of the Pearson IV type. The results obtained from a new design of Penning ion source are also...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1989-02, Vol.2 (1), p.249-253
Main Authors: Gwilliam, R.M., Ma, M.X., Mynard, J.E., Whitehead, N.J., Sealy, B.J., Blunt, R.T.
Format: Article
Language:English
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Summary:Carrier concentration and mobility profiles as a function of annealing time and temperature are reported for megaelectronvolt silicon implants into GaAs. Atomic profiles show the implant profile shape to be of the Pearson IV type. The results obtained from a new design of Penning ion source are also presented.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(89)90105-0