LBIC measurements of the recombining activity of dislocations in float zone silicon

The electrical activity of dislocations has been evidenced by LBIC scanning measurements through two different distributions of dislocations for which theoretical models leading to the recombination velocity could be applied. A close experimental correlation was found between photocurrent and disloc...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1989-10, Vol.4 (1), p.347-352
Main Authors: Mariani, J.L., Pichaud, B., Minari, F., Martinuzzi, S.
Format: Article
Language:English
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Summary:The electrical activity of dislocations has been evidenced by LBIC scanning measurements through two different distributions of dislocations for which theoretical models leading to the recombination velocity could be applied. A close experimental correlation was found between photocurrent and dislocation density. The models led to the same recombination velocity for dislocations Sd ≈ 10 3 cm s −1 . The role of oxygen and of temperature on the activity of dislocations is discussed.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(89)90269-9