Influence of deposition parameters on the properties of SiC films

The world-wide interest in amorphous SiC is due to the possibilities of relatively simple preparation of layers of this material. The present paper is aimed at studying the feasibility of obtaining the SiC films with parameters suitable for manufacturing semiconductor devices at a temperature of abo...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1992-01, Vol.11 (1-4), p.67-68
Main Authors: Vlaskina, S.I., Rodionov, V.E., Svechnikov, S.V.
Format: Article
Language:English
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Summary:The world-wide interest in amorphous SiC is due to the possibilities of relatively simple preparation of layers of this material. The present paper is aimed at studying the feasibility of obtaining the SiC films with parameters suitable for manufacturing semiconductor devices at a temperature of about 200°C The combined electrophysical and optical characteristics of the films may be interpreted only if one considers that the optical properties are determined by the amorphous phase and the electrophysical properties by the microcrystalline phase.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(92)90192-C