Mesotaxy by nickel diffusion into a buried amorphous silicon layer

A novel method to produce a buried epitaxial silicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the “as-implanted” state. Prolonged heating at 350°C leads to diffusion of meta...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1992-01, Vol.12 (1), p.103-106
Main Authors: Erokhin, Yu.N., Grötzschel, R., Oktyabrsky, S.R., Roorda, S., Sinke, W., Vyatkin, A.F.
Format: Article
Language:English
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Summary:A novel method to produce a buried epitaxial silicide in silicon is described. Metal atoms are deposited onto the surface of a piece of crystalline silicon (c-Si) which contains a buried amorphous silicon (a-Si) layer in the “as-implanted” state. Prolonged heating at 350°C leads to diffusion of metal atoms through the thin c-Si top layer followed by a chemical reaction with the buried a-Si, forming buried epitaxial silicide islands. These islands then move through the a-Si layer, leaving behind epitaxially crystallized silicon.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(92)90267-D