Growth of bulk SiC

The problems of growing SiC ingots with LETI methods are considered in this paper. The analysis of factors influenced by conditions of different polytype modification crystals growing is conducted. Comparative characteristics of growing processes of crystals with the LETI method and the Lely method...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1995, Vol.29 (1), p.83-89
Main Author: Tairov, Yu.M.
Format: Article
Language:English
Subjects:
Lely method
LETI method
Silicon carbide
Single-crystal growth
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Summary:The problems of growing SiC ingots with LETI methods are considered in this paper. The analysis of factors influenced by conditions of different polytype modification crystals growing is conducted. Comparative characteristics of growing processes of crystals with the LETI method and the Lely method are obtained.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)04048-9