Buried heterostructure AlGaAs photonic devices fabricated by low temperature mesa melt etching and regrowth

Low temperature melt-etching and liquid phase epitaxial regrowth was used to fabricate buried heterostructure laser diode arrays, optical amplifiers and active waveguide branches. 12 element laser diode arrays emitted 1 W total optical power at 1.2 A (room temperature, continuous wave) at 980 nm. 6...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.302-304
Main Authors: Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P., Suruceanu, G.I., Lupu, A.T.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Epitaxy etching
Exact sciences and technology
Gallium arsenide
Heterostructures
Liquid phase epitaxy
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Low temperature melt-etching and liquid phase epitaxial regrowth was used to fabricate buried heterostructure laser diode arrays, optical amplifiers and active waveguide branches. 12 element laser diode arrays emitted 1 W total optical power at 1.2 A (room temperature, continuous wave) at 980 nm. 6 dB fiber to fiber optical gain was obtained in buried heterostructure optical amplifiers operating at 830 nm. Active branching waveguides are shown to allow the compensation of 3 db branching losses.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90070-1