Potential sources of degradation in InGaAs/GaAs laser diodes

Transmission electron microscopy investigations show that dislocations nucleated during the processing of InGaAs/GaAs laser diodes and developed under high internal stress during laser operation are the primary sources of rapid degradation processes. Point defects can be generated during the metallo...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.310-313
Main Authors: Rechenberg, I., Beister, G., Bugge, F., Erbert, G., Gramlich, S., Klein, A., Maege, J., Pilatzek, M., Richter, U., Ruvimov, S.S., Treptow, H., Weyers, M.
Format: Article
Language:English
Subjects:
Applied sciences
Defect formation
Degradation
Electronics
Exact sciences and technology
Indium arsenide
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor laser diodes
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Summary:Transmission electron microscopy investigations show that dislocations nucleated during the processing of InGaAs/GaAs laser diodes and developed under high internal stress during laser operation are the primary sources of rapid degradation processes. Point defects can be generated during the metallo-organic vapour phase epitaxy growth procedure and are potential sources for gradual degradation. We have correlated the occurrence of such point defects with the growth interruption time, by measuring the carrier lifetime τ eff , its non-radiative part τ nr and the performance of broad-area lasers. Laser diodes manufactured from epitaxial material grown under optimized conditions show a high long-term stability.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90072-8