Studies of deep-level defects at III–V heterointerfaces

The results of recent deep-level investigations at III–V heterointerfaces are briefly reviewed. In particular, electronic states in n-type GaAs/AlGaAs heterojunctions, grown by molecular beam epitaxy, are studied by deep-level transient spectroscopy. In the Al composition range 0.25–1.00, a series o...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.387-392
Main Author: Krispin, P.
Format: Article
Language:English
Subjects:
AlGaAs
Electron states
Heterostructures
Molecular and atom beam epitaxy
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Summary:The results of recent deep-level investigations at III–V heterointerfaces are briefly reviewed. In particular, electronic states in n-type GaAs/AlGaAs heterojunctions, grown by molecular beam epitaxy, are studied by deep-level transient spectroscopy. In the Al composition range 0.25–1.00, a series of well-defined deep levels is found which accumulates on the AlGaAs side of the inverted heterointerface (GaAs grown on AlGaAs). The series of levels originates from intrinsic defects associated with arsenic vacancies. The enhanced appearance of intrinsic defects at the inverted GaAs/AlGaAs interface provides new information on the microscopic processes involved in growing strained AlGaAs layers and in gettering impurities at heterointerfaces.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90089-2