Investigation of the role of the crystal growth zone during silicon carbide crystal growth by the sublimation method

The dependence of the growth rate of SiC crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that a given crucible construction there is an exactly determined diameter of the GCS for growing of SiC cryst...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994-11, Vol.27 (2), p.69-72
Main Author: Lilov, S.K.
Format: Article
Language:English
Subjects:
Crystallization
Evaporation
Semiconductors
Silicon carbide
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Summary:The dependence of the growth rate of SiC crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that a given crucible construction there is an exactly determined diameter of the GCS for growing of SiC crystals with maximum sizes.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90124-4